jiu , lj nc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 designer's data sheet power field effect transistor n-channel enhancement-mode silicon gate this tmos power fet is designed for high speed power switch- ing applications such as switching regulators, converters, solenoid and relay drivers. ? silicon gate for fast switching speeds ? switching times specified at 100c ? designer's data ? loss- vos(on)- vgs(th) and soa specified at elevated temperature ? rugged ? soa is power dissipation limited ? source-tc-drain diode characterized for use with inductive loads maximum ratings MTM40N20 tt tmos tmos power fet 40 amperes rds(on) = <>??? ohm 209 volts rating drain-source voltage drain-gate voltage (rgs " 1 mn' gate-source voltage continuous non-repetitive (tp ? 50 ^.s) drain current ? continuous ? pulsed total power dissipation @ tc = 25c derate above 25c operating and storage temperature range symbol vdss vdgr vgs vgsm id idm pd tj, tstg valua 200 200 *20 40 40 200 250 2 -65 to 150 unit vdc vdc vdc vpk adc wans w/c c thermal characteristics thermal resistance ? junction to case ? junction to ambient maximum lead temperature for soldering purposes, 1/8" from case for 6 seconds rfljc r?ja tl 0.5 30 300 c/w c to-204ae electrical characteristics (tc = 25c unless otherwise noted) char*et?ri$tlc symbol mln unit off characteristics drain-source breakdown voltage (vqs = 0. id = 0-25 ma> MTM40N20 zero gate voltage drain current (vds = rated vdss- vgs = > (vds = rated vdss. vgs - 0, tj = 125c) gate-bodv leakage current, forward (vqsf - 20 vdc, vds = ' gate-body leakage current, reverse (vgsr - 20 vdc, vds = ' v(br)dss idss !gssf igssr 200 ? ? ? ? 10 100 100 100 vdc /iadc nadc nadc nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electrical characteristics ? continued (tc = 25c unless otherwise noted) characteristic symbol min max unit on characteristics* gate threshold voltage (vds = vqs, id = ' wai tj = 100c static dram-source on-resistance (vqs = 10 vdc, id = 20 adc) drain-source on-voltage (vgs = 10v) (id = 40 adc) (id = 20 adc, tj = 100c) forward transconductance (vds = 15 v, id = 20 a) vgs(th) rds(on) vds(on) 9fs 2 1.6 ? ? 10 4.5 4 0.08 3.8 3.2 ? vdc ohm vdc mhos dynamic characteristics input capacitance output capacitance reverse transfer capacitance (vds = 25 v. vqs = o, f = 1 mhz) c,ss goss ^rss ? ? ? 5500 1500 500 pf switching characteristics* (tj = 100ci turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-dram charge (vdd - 25 v, id = 0.5 rated id see figures 13 and 14 (vds ~ o.a rated vdss- id = rated id, vgs = 10v) see figure 12 (d(on) *r tdloff) tf q9 oge qgd ? ? ? ? 85 (typ) 45 (typ) 40 (typ) 60 300 400 250 95 ? - ns nc source drain diode characteristics'1 forward on-voltage forward turn-on time reverse recovery time (is = rated iq, vgs ~ ) vsd ton trr 2.0 (typ) 2 5 vdc limited by stray inductance 200 (typ) - 1 ? internal package inductance internal drain inductance (measured from the contact screw on the header closer to the source pin and the center of the die) internal source inductance (measured from the source pin, 0 25" from the package to the source bond pad) ld ls 5 (typ) 12.5 (typ) nh ?pulse test. pulse width ?; 300 ^s. duty cycle f, 2%
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